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1

POSITIVE AND NEGATIVE AFFECT IN THE FACTOR STRUCTURE OF THE STATE-TRAIT ANXIETY INVENTORY FOR JAPANESE WORKERS

IWATA, NOBORU, MISHIMA, NORIO, SHIMIZU, TAKASHI, MIZOUE, TETSUYA, FUKUHARA, MACHIKO, HIDANO, TADASHI, SPIELBERGER, CHARLES D.

Journal:

Psychological Reports

Année:

1998

Langue:

english

Fichier:

PDF, 208 KB

english, 1998

2

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

Taoka, Noriyuki, Yokoyama, Masafumi, Kim, Sang Hyeon, Suzuki, Rena, Lee, Sunghoon, Iida, Ryo, Hoshii, Takuya, Jevasuwan, Wipakorn, Maeda, Tatsuro, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, H

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2013

Langue:

english

Fichier:

PDF, 748 KB

english, 2013

3

Molecular and Clinical Features of Non-Burkitt’s, Diffuse Large-Cell Lymphoma of B-Cell Type Associated With the c-MYC/Immunoglobulin Heavy-Chain Fusion Gene

Akasaka, Takashi, Akasaka, Hiroshi, Ueda, Chiyoko, Yonetani, Noboru, Maesako, Yoshitomo, Shimizu, Akira, Yamabe, Hirohiko, Fukuhara, Shirou, Uchiyama, Takashi, Ohno, Hitoshi

Journal:

Journal of Clinical Oncology

Année:

2000

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2000

4

Suplatast tosilate protects the lung against hyperoxic lung injury by scavenging hydroxyl radicals

Fukuhara, Kazuhide, Nakashima, Taku, Abe, Manabu, Masuda, Takeshi, Hamada, Hironobu, Iwamoto, Hiroshi, Fujitaka, Kazunori, Kohno, Nobuoki, Hattori, Noboru

Journal:

Free Radical Biology and Medicine

Année:

2017

Langue:

english

Fichier:

PDF, 1.41 MB

english, 2017

5

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Horikiri, Fumimasa, Fukuhara, Noboru, Ohta, Hiroshi, Asai, Naomi, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi, Toguchi, Masachika, Miwa, Kazuki, Sato, Taketomo

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2019

Langue:

english

Fichier:

PDF, 2.33 MB

english, 2019

6

Refinement of the BCL2/immunoglobulin heavy chain fusion gene in t(14;18)(q32;q21) by polymerase chain reaction amplification for long targets

Takashi Akasaka, Hiroshi Akasaka, Noboru Yonetani, Hitoshi Ohno, Hirohiko Yamabe, Shirou Fukuhara, Minoru Okuma

Journal:

Genes, Chromosomes and Cancer

Année:

1998

Langue:

english

Fichier:

PDF, 304 KB

english, 1998

7

ChemInform Abstract: Synthesis of Espicufolin Based on 6-endo Ring Closure of o-Alkynoylnaphthols.

Hidemitsu Uno, Katsuji Sakamoto, Erina Honda, Kaori Fukuhara, Noboru Ono, Junya Tanaka, Masahiro Sakanaka

Journal:

Année:

2001

Fichier:

PDF, 31 KB

2001

8

Si-related defects in InGaP/GaAs heterojunction bipolar transistors

Hisashi Yamada, Noboru Fukuhara, Masahiko Hata

Journal:

Physica B: Condensed Matter

Année:

2007

Langue:

english

Fichier:

PDF, 199 KB

english, 2007

9

High current gain stability of carbon-doped p-GaAs in InGaP/GaAs heterojunction bipolar transistors

Hisashi Yamada, Noboru Fukuhara, Masahiko Hata

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 184 KB

english, 2007

10

Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors

Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Katsuhiro Akimoto

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 297 KB

english, 2008

11

AC response analysis of C–V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Takuya Hoshii, Ryo Iida, Sunghoon Lee, Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mits

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 504 KB

english, 2011

12

An in situ experiment of calcium carbonate dissolution in the central Pacific Ocean

Tatsuo Fukuhara, Yuichiro Tanaka, Noboru Ioka, Akira Nishimura

Journal:

International Journal of Greenhouse Gas Control

Année:

2008

Langue:

english

Fichier:

PDF, 841 KB

english, 2008

13

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors

Noriyuki Miyata, Hiroyuki Ishii, Yuji Urabe, Taro Itatani, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Momoko Deura, Masakazu Sugiyama, Mitsuru Takenaka, Shinichi Takagi

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 503 KB

english, 2011

14

Post-discharge depressive symptoms can predict quality of life in AMI survivors: A prospective cohort study in Japan

Michi Sakai, Takeo Nakayama, Takuro Shimbo, Kenji Ueshima, Noboru Kobayashi, Toru Izumi, Naoki Sato, Minoru Yoshiyama, Akira Yamashina, Shunichi Fukuhara

Journal:

International Journal of Cardiology

Année:

2011

Langue:

english

Fichier:

PDF, 203 KB

english, 2011

15

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Taoka, Noriyuki, Yokoyama, Masafumi, Hyeon Kim, Sang, Suzuki, Rena, Lee, Sunghoon, Iida, Ryo, Hoshii, Takuya, Jevasuwan, Wipakorn, Maeda, Tatsuro, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, H

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 639 KB

english, 2013

16

140 Experience with LDR and MDR brachytherapy for cervical cancer

Okawa, Tomohiko, Okawa, Midori-Kita, Kaneyasu, Yuko, Karasawa, Kumiko, Fukuhara, Noboru

Journal:

Radiotherapy and Oncology

Année:

1996

Langue:

english

Fichier:

PDF, 136 KB

english, 1996

17

405Treatment results of radiotherapy in carcinoma of the cervix:—Experience of Tokyo Women's medical College over 25-year

Okawa, Tomohiko, Kaneyasu, Yuko, Kita-Okawa, Midori, Fukuhara, Noboru, Karasawa, Kumiko

Journal:

Radiotherapy and Oncology

Année:

1996

Langue:

english

Fichier:

PDF, 112 KB

english, 1996

18

[IEEE 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM) - Santa Barbara, CA, USA (2012.08.27-2012.08.30)] 2012 International Conference on Indium Phosphide and Related Materials - Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

Yokoyama, Masafumi, Taoka, Noriyuki, Suzuki, Rena, Ichikawa, Osamu, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi

Année:

2012

Langue:

english

Fichier:

PDF, 1.53 MB

english, 2012

19

Production of sterile transcripts of C γ genes in an IgM-producing human neoplastic B cell line that switches to IgG-producing cells

Sideras, Paschalis, Mizuta, Tatsunobu-Ryushin, Kanamorl, Hiroshi, Suzuki, Noboru, Okamoto, Masaya, Kuze, Kogo, Ohno, Hitoshi, Dol, Shoichi, Fukuhara, Shirou, Hassan, Mohammed Sawkat, Hammarstöm, Lenna

Journal:

International Immunology

Année:

1989

Langue:

english

Fichier:

PDF, 6.17 MB

english, 1989

20

High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al 2 O 3 gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition

Aoki, Takeshi, Fukuhara, Noboru, Osada, Takenori, Sazawa, Hiroyuki, Hata, Masahiko, Inoue, Takayuki

Journal:

Applied Physics Express

Année:

2014

Langue:

english

Fichier:

PDF, 2.15 MB

english, 2014

21

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

Yokoyama, Masafumi, Iida, Ryo, Kim, Sanghyeon, Taoka, Noriyuki, Urabe, Yuji, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, T

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 242 KB

english, 2011

22

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

SangHyeon Kim,, Yokoyama, Masafumi, Taoka, Noriyuki, Iida, Ryo, Sung-Hoon Lee,, Nakane, Ryosho, Urabe, Yuji, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Tak

Journal:

IEEE Transactions on Nanotechnology

Année:

2013

Langue:

english

Fichier:

PDF, 930 KB

english, 2013

23

Synthesis of espicufolin based on 6-endo ring closure of o-alkynoylnaphthols †

Uno, Hidemitsu, Sakamoto, Katsuji, Honda, Erina, Fukuhara, Kaori, Ono, Noboru, Tanaka, Junya, Sakanaka, Masahiro

Journal:

Journal of the Chemical Society Perkin Transactions 1

Année:

2001

Langue:

english

Fichier:

PDF, 225 KB

english, 2001

24

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - III-V-semiconductor-on-insulator MISFETs on Si with buried SiO2 and Al2O3 layers by direct wafer bonding

Yokoyama, Masafumi, Yasuda, Tetsuji, Takagi, Hideki, Urabe, Yuji, Ishii, Hiroyuki, Miyata, Noriyuki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka,

Année:

2010

Langue:

english

Fichier:

PDF, 506 KB

english, 2010

25

Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Kim, Sanghyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Nakane, Ryosho, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2013

26

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

Suzuki, Rena, Taoka, Noriyuki, Yokoyama, Masafumi, Kim, Sang-Hyeon, Hoshii, Takuya, Maeda, Tatsuro, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shini

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 1.94 MB

english, 2012

27

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

Kim, SangHyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Iida, Ryo, Lee, Sunghoon, Nakane, Ryosho, Urabe, Yuji, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Takena

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 721 KB

english, 2011

28

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Urabe, Yuji, Yokoyama, Masafumi, Takagi, Hideki, Yasuda, Tetsuji, Miyata, Noriyuki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 783 KB

english, 2010

29

Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

Kim, SangHyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Nakane, Ryosho, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 950 KB

english, 2012

30

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Kim, SangHyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Nakane, Ryosho, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 872 KB

english, 2012

31

A packed building-block compensator (TETRIS–RT) and feasibility for IMRT delivery

Nakagawa, Keiichi, Fukuhara, Noboru, Kawakami, Hideyuki

Journal:

Medical Physics

Année:

2005

Langue:

english

Fichier:

PDF, 577 KB

english, 2005

32

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism

Urabe, Yuji, Miyata, Noriyuki, Ishii, Hiroyuki, Itatani, Taro, Maeda, Tatsuro, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Yokoyama, Masafumi, Taoka, Noriyuki, Takenaka, Mitsur

Année:

2010

Langue:

english

Fichier:

PDF, 1.67 MB

english, 2010

33

Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

Yokoyama, Masafumi, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

Applied Physics Express

Année:

2011

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2011

34

Formation of III–V-on-insulator structures on Si by direct wafer bonding

Yokoyama, Masafumi, Iida, Ryo, Ikku, Yuki, Kim, Sanghyeon, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

Semiconductor Science and Technology

Année:

2013

Langue:

english

Fichier:

PDF, 68 KB

english, 2013

35

Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement

Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Nakano, Takayuki, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro

Journal:

Japanese Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 172 KB

english, 2011

36

Relationships between Interface Structures and Electrical Properties in the High-k/III–V System

Yasuda, Tetsuji, Miyata, Noriyuki, Urabe, Yuji, Ishii, Hiroyuki, Itatani, Taro, Takagi, Hideki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Ohtake, Akihiro, Yokoyama, Masafumi, Hoshii, Takuya,

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 1.42 MB

english, 2009

37

The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors

Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko

Journal:

Japanese Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 130 KB

english, 2007

38

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko

Journal:

Japanese Journal of Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 93 KB

english, 2006

39

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

Kim, SangHyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Iida, Ryo, Lee, Sunghoon, Nakane, Ryosho, Urabe, Yuji, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Takena

Journal:

Applied Physics Express

Année:

2011

Langue:

english

Fichier:

PDF, 672 KB

english, 2011

40

Self-Aligned Metal Source/Drain In x Ga 1- x As n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy

Kim, SangHyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Iida, Ryo, Lee, Sunghoon, Nakane, Ryosho, Urabe, Yuji, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Takena

Journal:

Applied Physics Express

Année:

2011

Langue:

english

Fichier:

PDF, 907 KB

english, 2011

41

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

Ishii, Hiroyuki, Miyata, Noriyuki, Urabe, Yuji, Itatani, Taro, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Deura, Momoko, Sugiyama, Masakazu, Takenaka, Mitsuru, Takagi, Shinich

Journal:

Applied Physics Express

Année:

2009

Langue:

english

Fichier:

PDF, 1.48 MB

english, 2009

42

III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

Yokoyama, Masafumi, Kim, Sanghyeon, Zhang, Rui, Taoka, Noriyuki, Urabe, Yuji, Maeda, Tatsuro, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Sugiy

Journal:

Applied Physics Express

Année:

2012

Langue:

english

Fichier:

PDF, 1.70 MB

english, 2012

43

Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Kim, SangHyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Iida, Ryo, Lee, Sunghoon, Nakane, Ryosho, Urabe, Yuji, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Takena

Journal:

Applied Physics Express

Année:

2012

Langue:

english

Fichier:

PDF, 780 KB

english, 2012

44

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - High Quality Thin Body III-V-On-Insulator Channel Layer Transfer on Si Wafer Using Direct Wafer Bonding

Yokoyama, Masafumi, Yasuda, Tetsuji, Takagi, Hideki, Yamada, Hisashi, Urabe, Yuji, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi

Année:

2010

Langue:

english

Fichier:

PDF, 1.21 MB

english, 2010

45

Survey of Japanese Physicians' Attitudes towards the Care of Adult Patients in Persistent Vegetative State

Atsushi Asai, Munetaka Maekawa, Ichiro Akiguchi, Tsuguya Fukui, Yasuhiko Miura, Noboru Tanabe and Shunichi Fukuhara

Journal:

Journal of Medical Ethics

Année:

1999

Langue:

english

Fichier:

PDF, 1.26 MB

english, 1999

46

Medical Decisions Concerning the End of Life: A Discussion with Japanese Physicians

Atsushi Asai, Shunichi Fukuhara, Osamu Inoshita, Yasuhiko Miura, Noboru Tanabe and Kiyoshi Kurokawa

Journal:

Journal of Medical Ethics

Année:

1997

Langue:

english

Fichier:

PDF, 899 KB

english, 1997

47

High Resistivity Oxygen-Doped AlGaAs For Power Devices

Sasajima, Yuichj, Fukuhara, Noboru, Hata, Masahiko, Maeda, Takayoshi, Okushi, Hideyo

Journal:

MRS Proceedings

Année:

1997

Langue:

english

Fichier:

PDF, 358 KB

english, 1997

48

Three-dimensional conformal arc radiotherapy using a C-arm linear accelerator with a computed tomography on-rail system for prostate cancer: clinical outcomes

Kumabe, Atsuhiro, Fukuhara, Noboru, Utsunomiya, Takuji, Kawase, Takatsugu, Iwata, Kunihiro, Okada, Yukinori, Sutani, Shinya, Ohashi, Toshio, Oya, Mototsugu, Shigematsu, Naoyuki

Journal:

Radiation Oncology

Année:

2015

Langue:

english

Fichier:

PDF, 2.13 MB

english, 2015

49

Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A

Yamada, Hisashi, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko

Journal:

physica status solidi (b)

Année:

2016

Langue:

english

Fichier:

PDF, 471 KB

english, 2016

50

Thymic Carcinoma Associated with Pinealoma and Terminating with Peroxidase-negative Acute Myeloid Leukemia.

YONEKURA, Shuji, NAGAO, Tadami, ARIMORI, Shigeru, KOBAYASHI, Ichirou, FUKUHARA, Noboru, MORI, Tomoyuki

Journal:

Internal Medicine

Année:

1992

Langue:

english

Fichier:

PDF, 694 KB

english, 1992